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The Scientific World Journal
Volume 2014, Article ID 163414, 5 pages
Research Article

Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation

1Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, Malaysia
2Department of Electrical and Electronic Engineering, Segi University, 47810 Petaling Jaya, Selangor, Malaysia
3Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia

Received 13 June 2014; Accepted 27 July 2014; Published 14 August 2014

Academic Editor: Changzhi Li

Copyright © 2014 Gim Heng Tan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.