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The Scientific World Journal
Volume 2014, Article ID 475423, 6 pages
http://dx.doi.org/10.1155/2014/475423
Research Article

Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi Arabia

Received 20 April 2014; Accepted 14 July 2014; Published 22 July 2014

Academic Editor: Paolo Colantonio

Copyright © 2014 Moustafa Ahmed. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Jan Litvik, Ivan Dolnak, Milan Dado, and Michal Kuba, “Computational effective numerical models of the active semiconductor components in the optical communication systems,” 2017 Conference on Microwave Techniques (COMITE), pp. 1–6, . View at Publisher · View at Google Scholar
  • Jan Litvik, Ivan Dolnak, and Milan Dado, “Numerical models of active devices utilized in the optical communication systems,” 2017 15th International Conference on Emerging eLearning Technologies and Applications (ICETA), pp. 1–5, . View at Publisher · View at Google Scholar
  • Michal Kuba, Jan Litvik, Daniel Benedikovic, Jozef Dubovan, and Milan Dado, “Numerical Estimation of Spectral Properties of Laser Based on Rate Equations,” Mathematical Problems in Engineering, vol. 2016, 2016. View at Publisher · View at Google Scholar
  • Mohsen Darman, and Kiazand Fasihi, “A new compact circuit-level model of semiconductor lasers: investigation of relative intensity noise and frequency noise spectra,” Journal of Modern Optics, pp. 1–7, 2017. View at Publisher · View at Google Scholar