Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

Table 1

Definition and numerical values of the InGaN laser parameters.

Symbol	Definition	Value
𝜆	Wavelength	410 nm
𝑛𝐷	Refractive index of active layer	2.6
𝐿𝐷	Active layer length	300 𝜇m
𝑎	Differential gain coefficient	1.85×10^−12 m^2
𝐵𝑐	Nonlinear gain coefficient	2.7×10^−5 s^−1
𝑁𝑔	Carrier number at transparency	2.52×10^8
𝑁𝑠	Carrier number characterizing 𝐺NL	2.01×10^8
𝛼	Linewidth enhancement factor	2
𝜏𝑠	Spontaneous emission lifetime	2 ns
𝑅𝑓	Front facet reflectivity	0.4
𝑅𝑏	Back facet reflectivity	0.7
𝐺th	Threshold gain	2.2×10^11 s^−1