Research Article
Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
Table 1
Definition and numerical values of the InGaN laser parameters.
| Symbol | Definition | Value |
| | Wavelength | 410 nm | | Refractive index of active layer | 2.6 | | Active layer length | 300 m | | Differential gain coefficient | m2 | | Nonlinear gain coefficient | s−1 | | Carrier number at transparency | | | Carrier number characterizing | | | Linewidth enhancement factor | 2 | | Spontaneous emission lifetime | 2 ns | | Front facet reflectivity | 0.4 | | Back facet reflectivity | 0.7 | | Threshold gain | s−1 |
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