Effects of Gate Stack Structural and Process Defectivity on High-<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2145996pt" id="M1" height="12.9477pt" version="1.1" viewBox="0 -12.7331 8.99546 12.9477" width="8.99546pt"><g transform="matrix(.018,0,0,-0.018,0,0)"><path id="g113-108" d="M480 416C480 431 465 448 438 448C388 448 312 383 252 330C217 299 188 273 155 237H153L257 680C262 700 263 712 253 712C240 712 183 684 97 674L92 648L126 647C166 646 172 645 163 606L23 -6L29 -12C51 -5 77 2 107 8C115 62 130 128 142 180C153 193 179 220 204 241C231 170 259 106 288 54C317 0 336 -12 358 -12C381 -12 423 2 477 80L460 100C434 74 408 54 398 54C385 54 374 65 351 107C326 154 282 241 263 299C296 332 351 377 403 377C424 377 436 372 445 368C449 366 456 368 462 375C472 386 480 402 480 416Z"></path></g></svg> Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

<table>Power-law time dependence of simulated <svg height="9.15858pt" id="M85" style="vertical-align:-0.1490297pt" version="1.1" viewbox="0 -9.00955 18.2837 9.15858" width="18.2837pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M600 0V24L339 665L311 657L43 24V0H600ZM497 50H107L303 539L497 50Z" id="g113-133"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="641" vert-adv-y="641"></glyph.data></g><g transform="matrix(.0135,0,0,-0.0135,8.678,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g></svg>th for variation of physical thickness (TPhy) for (a) HfO<sub>2</sub> layer and (b) SiO<sub>2</sub> IL.</table>

The Scientific World Journal

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Figure 6

Figure 6: Effects of Gate Stack Structural and Process Defectivity on High-<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2145996pt" id="M1" height="12.9477pt" version="1.1" viewBox="0 -12.7331 8.99546 12.9477" width="8.99546pt"><g transform="matrix(.018,0,0,-0.018,0,0)"><path id="g113-108" d="M480 416C480 431 465 448 438 448C388 448 312 383 252 330C217 299 188 273 155 237H153L257 680C262 700 263 712 253 712C240 712 183 684 97 674L92 648L126 647C166 646 172 645 163 606L23 -6L29 -12C51 -5 77 2 107 8C115 62 130 128 142 180C153 193 179 220 204 241C231 170 259 106 288 54C317 0 336 -12 358 -12C381 -12 423 2 477 80L460 100C434 74 408 54 398 54C385 54 374 65 351 107C326 154 282 241 263 299C296 332 351 377 403 377C424 377 436 372 445 368C449 366 456 368 462 375C472 386 480 402 480 416Z"></path></g></svg> Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs 

Figure 6 | Effects of Gate Stack Structural and Process Defectivity on High- Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs 