Effects of Gate Stack Structural and Process Defectivity on High- Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs
Figure 9
Evolution of threshold voltage shift based on different densities of precursor. (a) Variation in thicknesses of SiO2 with thickness of 2 nm HfO2. (b) Variation in thicknesses of HfO2 with thickness of 0.6 nm SiO2 interface layer.
