Effects of Gate Stack Structural and Process Defectivity on High- Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

Table 1

Performance summary of simulated devices.

	This study		[17]
(nm)	28	32	24
(V)	0.9	1	0.9
(A/um)	7.53 × 10^−4	5.16 × 10^−4	5.25 × 10^−4
(A/um)	3.97 × 10^−6	2.22 × 10^−7	3.70 × 10^−7