Effects of Gate Stack Structural and Process Defectivity on High- Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

Table 2

Default spread of energy wells and barriers used in simulation [16, 18–20].

Parameter	Definition	Default values (eV)
	Trap level of the precursor	−1.14 to −0.31
	Trap level of the center	0.01 to 0.3
	Trap level of the Pb center	0.01 to 0.5
	Barrier energy of a transition from state 3 to state 1	0.01 to 1.15
	Barrier energy of a transition from state 1 to state 2	0.01 to 1.15
	Barrier energy of a transition from state 2 to state 4	0.44 eV
Parameter	Definition	Default values
	Electron cross-section	1.08 × 10^−15 cm^2
	Hole capture cross-section	1.24 × 10^−15 cm^2
	Prefactor for field-dependent barrier energy	0.74 nm
	Attempt frequencies	10^13 s^−1