Valence Band Structure of InAs_1−𝑥Bi_𝑥 and InSb_1−𝑥Bi_𝑥 Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Figure 2

Position of the 𝐸₊ and 𝐸₋ related heavy/light hole and spin-orbit split-off bands as a function of Bi mole fraction for InAs_1−𝑥Bi_𝑥, calculated using VBAC model.