Valence Band Structure of InAs_1−𝑥Bi_𝑥 and InSb_1−𝑥Bi_𝑥 Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Figure 4

Calculated values of the 𝐸₊ and 𝐸₋ related heavy/light hole, and the spin-orbit split bands in InSb_1−𝑥Bi_𝑥, as a function of Bi mole fraction 𝑥.