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The Scientific World Journal
Volume 2014, Article ID 737296, 8 pages
Research Article

Weak Localization in Graphene: Theory, Simulations, and Experiments

1Department of Physics, McGill University, Montreal, QC, Canada H3A 2T8
2Institute of Photonic Sciences, Castelldefels, 08860 Barcelona, Spain

Received 7 February 2014; Accepted 20 May 2014; Published 9 June 2014

Academic Editor: Jau-Wern Chiou

Copyright © 2014 Michael Hilke et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of nonquantizing magnetic fields. We discuss the effects of two-carrier transport, weak localization, weak antilocalization, and strong localization for graphene devices of various mobilities, through theory, experiments, and numerical simulations. In particular, we observe a minimum in the weak localization and strong localization length reminiscent of the minimum in the conductivity, which allows us to make the connection between weak and strong localization. This provides a unified framework for both localizations, which explains the observed experimental features. We compare these results to numerical simulation and find a remarkable agreement between theory, experiment, and numerics. Various graphene devices were used in this study, including graphene on different substrates, such as glass and silicon, as well as low and high mobility devices.