Research Article

Augmented Twin-Nonlinear Two-Box Behavioral Models for Multicarrier LTE Power Amplifiers

Table 1

Memory effects intensity of the devices under test.

Device under test Memory effects intensity
Lower channelUpper channel

2425 MHz Doherty PA17.49 dBc21.23 dBc
2140 MHz Doherty PA42.56 dBc41.90 dBc