Effects of Vacancy Cluster Defects on Electrical and Thermodynamic Properties of Silicon Crystals

Table 1

Patterns of vacancy cluster defect and their corresponding lattice constant and band gap.

	Perfect Si crystal	Point defect, VC1	Tetrahedron; vacancy clusters, TVC5	Hexagonal ring; vacancy clusters, HRVC10
		\	\	\
Lattice constant (Å)	5.431	5.346	5.241	5.194
Band gap (eV)	0.59	0.31	0.25	0.21