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The Scientific World Journal
Volume 2014 (2014), Article ID 876435, 7 pages
Research Article

Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers

1School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia
2School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UK

Received 10 January 2014; Accepted 16 February 2014; Published 19 March 2014

Academic Editors: J. Montiel-Nelson and L. Palilis

Copyright © 2014 Nor Muzlifah Mahyuddin and Gordon Russell. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Technology scaling relies on reduced nodal capacitances and lower voltages in order to improve performance and power consumption, resulting in significant increase in layout density, thus making these submicron technologies more susceptible to soft errors. Previous analysis indicates a significant improvement in SEU tolerance of the driver when the bias current is injected into the circuit but results in increase of power dissipation. Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. Results indicate no significant changes in when the effective transistor length is increased by 10%, but there is an improvement when high temperature and high bias currents are applied. However, this is due to other process parameters that are temperature dependent, which contribute to the sharp increase in . It is found that, with temperature, there is no clear factor that can justify the direct impact of temperature on the SEU tolerance. Thus, in order to improve the SEU tolerance, high bias currents are still considered to be the most effective method in improving the SEU sensitivity. However, good trade-off is required for the low-swing driver in order to meet the reliability target with minimal power overhead.