An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor
Figure 3
Simulation results for 0.18 μm TSMC process and for standard NMOS transistor. (a) The proposed diode connected MOS transistor, (b) the intrinsic PN junctions of the MOS transistor, and (c) the I-V characteristic of the proposed diode and (d) zoomed I-V characteristic to show difference between forward current and reverse (leakage) current of proposed and conventional diode connected transistor.
