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The Scientific World Journal
Volume 2014, Article ID 984591, 8 pages
Research Article

Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes

1Advanced Materials Research Group, Computational Nano Science & Technology Lab, ABV-Indian Institute of Information Technology & Management Gwalior (M.P.) 474015, India
2School of Nanotechnology, Rajiv Gandhi Proudyogiki Vishwavidyalaya Bhopal (M.P.) 462033, India

Received 4 August 2013; Accepted 21 October 2013; Published 24 February 2014

Academic Editors: G.-R. Li and G. Ouyang

Copyright © 2014 Anurag Srivastava et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [5 citations]

The following is the list of published articles that have cited the current article.

  • Md. Shahzad Khan, Anurag Srivastava, Rajneesh Chaurasiya, Mohd. Shahid Khan, and Piyush Dua, “NH3 and PH3 adsorption through single walled ZnS nanotube: First principle insight,” Chemical Physics Letters, vol. 636, pp. 103–109, 2015. View at Publisher · View at Google Scholar
  • Reena Srivastava, Sadhana Shrivastava, Uma Shankar Sharma, and Anurag Srivastava, “First principle insight of methane adsorption through single walled carbon nanotube,” Advanced Science Letters, vol. 21, no. 9, pp. 2884–2886, 2015. View at Publisher · View at Google Scholar
  • Md. Shahzad Khan, and Anurag Srivastava, “NH3 and NO2 adsorption analysis of GaN nanotube: A First principle investigation,” Journal of Electroanalytical Chemistry, 2016. View at Publisher · View at Google Scholar
  • Uma Shankar Sharma, and Rashmi Shah, “Computational study of Cr substituted single-walled GaN nanotubes,” Journal of Physics: Conference Series, vol. 836, no. 1, 2017. View at Publisher · View at Google Scholar
  • Johnathan M. Sodré, Elson Longo, Carlton A. Taft, João B.L. Martins, and José D. dos Santos, “Electronic structure of GaN nanotubes,” Comptes Rendus Chimie, vol. 20, no. 2, pp. 190–196, 2017. View at Publisher · View at Google Scholar