Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions

Figure 10

Transient simulation results of a metal-oxide junction connected with sinusoidal voltage source with peak of 2 V using the proposed physical models: (a), (c), and (e) are the results of voltage compared with current, while (b), (d), and (f) are the results of voltage compared with charge. Here (a) and (b) are the case when the tunneling current is dominant, (c) and (d) are when the capacitive current is dominant, and (e) and (f) are when tunneling current and capacitive current are comparable. Simulation parameter: , , , , , , , , , , , , , , , , and . The three cases are different gap characteristics where it has different permittivity in the three cases with different barrier heights. For (a) and (b) , , and . For (c) and (d) , , and . For (e) and (f) , , and .

(a)

(b)

(c)

(d)

(e)

(f)