Table of Contents Author Guidelines Submit a Manuscript
VLSI Design
Volume 8 (1998), Issue 1-4, Pages 301-305
http://dx.doi.org/10.1155/1998/21494

Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs

1Department of Electrical Engineering Arizona State University, Tempe, AZ 85287-5706, USA
2lntel Corp., Chandler, AZ, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [7 citations]

The following is the list of published articles that have cited the current article.

  • R.O. Grondin, S.M. El-Ghazaly, and S. Goodnick, “A review of global modeling of charge transport in semiconductors and full-wave electromagnetics,” IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 6, pp. 817–829, 1999. View at Publisher · View at Google Scholar
  • D. Vasileska, W.J. Gross, and D.K. Ferry, “Monte Carlo particle-based simulations of deep-submicron n-MOSFETs with real-space treatment of electron–electron and electron–impurity interactions,” Superlattices and Microstructures, vol. 27, no. 2-3, pp. 147–157, 2000. View at Publisher · View at Google Scholar
  • Dk Ferry, D Vasileska, and Wj Gross, “3D simulations of ultra-small MOSFETs with real-space treatment of the electron-electron and electron-ion interactions,” Vlsi Design, vol. 10, no. 4, pp. 437–+, 2000. View at Publisher · View at Google Scholar
  • W. J. Gross, D. Vasileska, and D. K. Ferry, “Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics,” Journal of Applied Physics, vol. 91, no. 6, pp. 3737, 2002. View at Publisher · View at Google Scholar
  • D. Vasileska, H. R. Khan, S. S. Ahmed, C. Ringhofer, and C. Heitzinger, “Quantum And Coulomb Effects In Nanodevices,” International Journal of Nanoscience, vol. 04, no. 03, pp. 305–361, 2005. View at Publisher · View at Google Scholar
  • H.R. Khan, D. Vasileska, and S.S. Ahmed, “Modeling Coulomb effects in nanoscale devices,” Journal of Computational and Theoretical Nanoscience, vol. 5, no. 9, pp. 1793–1827, 2008. View at Publisher · View at Google Scholar
  • Dragica Vasileska, and Nabil Ashraf, “Static analysis of random telegraph noise in a 45-nm channel length conventional mosfet device: Threshold voltage and ON-current fluctuations,” IEEE Transactions on Nanotechnology, vol. 10, no. 6, pp. 1394–1400, 2011. View at Publisher · View at Google Scholar