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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 301-305

Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs

1Department of Electrical Engineering Arizona State University, Tempe, AZ 85287-5706, USA
2lntel Corp., Chandler, AZ, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [7 citations]

The following is the list of published articles that have cited the current article.

  • R.O. Grondin, S.M. El-Ghazaly, and S. Goodnick, “A review of global modeling of charge transport in semiconductors and full-wave electromagnetics,” IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 6, pp. 817–829, 1999. View at Publisher · View at Google Scholar
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