Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 47-51

Interface Roughness Effects in Ultra-Thin Tunneling Oxides

1Department of Physics, National Tsing Hua University, ROC, Hsinchu 300, Taiwan
2Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology Pasadena, California 91125, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

D. Z.-Y. Ting, Erik S. Daniel, and T. C. Mcgill, “Interface Roughness Effects in Ultra-Thin Tunneling Oxides,” VLSI Design, vol. 8, no. 1-4, pp. 47-51, 1998.