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T. Okada, K. Horio, "Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation", VLSI Design, vol. 8, Article ID 023740, 6 pages, 1998. https://doi.org/10.1155/1998/23740
Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation
By using an energy transport model, we simulate cutoff frequency versus collector current density characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various -collector thickness and -doping densities. It is found that the calculated characteristics show double peak behavior when the - layer is thick enough and the -doping is high enough to allow existence of neutral - region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher ) which is not usually reported experimentally.
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