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A. Greiner, L. Varani, L. Reggiani, M. C. Vecchi, T. Kuhn, P. Golinelli, "Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation", VLSI Design, vol. 8, Article ID 027140, 6 pages, 1998. https://doi.org/10.1155/1998/27140
Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation
Within a correlation-function (CF) formalism, the kinetic coefficientsof charge carriers in semiconductors are studied under different conditions. For the case of linear response in equilibrium, thetransitions from the non-degenerate to the degenerate regimes as wellas from ballistic to diffusive conditions are discussed within ananalytical model. Generalizing the method to high-field transport innondegenerate semiconductors, the CFs are determined by Monte Carlo (MC) calculations for bulk silicon from which the appropriate thermalconductivity has been obtained and included into the hydrodynamic code HEIELDS. For an n+nn+ submicron structure the temperatureand velocity profiles of the carriers have been calculated with HFIELDS.
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