VLSI Design

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Computational Electronics

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Volume 8 |Article ID 027140 | https://doi.org/10.1155/1998/27140

A. Greiner, L. Varani, L. Reggiani, M. C. Vecchi, T. Kuhn, P. Golinelli, "Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation", VLSI Design, vol. 8, Article ID 027140, 6 pages, 1998. https://doi.org/10.1155/1998/27140

Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation


Within a correlation-function (CF) formalism, the kinetic coefficientsof charge carriers in semiconductors are studied under different conditions. For the case of linear response in equilibrium, thetransitions from the non-degenerate to the degenerate regimes as wellas from ballistic to diffusive conditions are discussed within ananalytical model. Generalizing the method to high-field transport innondegenerate semiconductors, the CFs are determined by Monte Carlo (MC) calculations for bulk silicon from which the appropriate thermalconductivity has been obtained and included into the hydrodynamic code HEIELDS. For an n+nn+ submicron structure the temperatureand velocity profiles of the carriers have been calculated with HFIELDS.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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