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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 59-64

Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation

1Institut fü Mikrosystemtechnik, Albert-Ludwigs-Universität Freiburg, Am Flughafen 17, Freiburg 79110, Germany
2CEM2 (CNRS UMR 5507), Université Montpellier II, Montpellier Cedex 5 34095, France
3INFM, Dipartimento di Scienza dei Materiali, Università di Leece, Via Arnesano, Lecce 73100, Italy
4Dipartimento di Elettronica Informatica e Sistemistica, Università di Bologna, viale Risorgimento 2, Bologna 40136, Italy
5Institut für Theoretische Physik II, Westfälische Wilhelms-Universität, Wilhelm--Klemm-Str. 10, Münster 48149, Germany
6lNFM, Dipartimento di Fisica, Università di Modena, Via Campi 213/A, Modena 41100, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Within a correlation-function (CF) formalism, the kinetic coefficientsof charge carriers in semiconductors are studied under different conditions. For the case of linear response in equilibrium, thetransitions from the non-degenerate to the degenerate regimes as wellas from ballistic to diffusive conditions are discussed within ananalytical model. Generalizing the method to high-field transport innondegenerate semiconductors, the CFs are determined by Monte Carlo (MC) calculations for bulk silicon from which the appropriate thermalconductivity has been obtained and included into the hydrodynamic code HEIELDS. For an n+nn+ submicron structure the temperatureand velocity profiles of the carriers have been calculated with HFIELDS.