VLSI Design

VLSI Design / 1998 / Article
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Computational Electronics

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Volume 8 |Article ID 029629 | https://doi.org/10.1155/1998/29629

S. Roy, A. Asenov, S. Babiker, J. R. Barker, S. P. Beaumont, "RF Performance of Si/SiGe MODFETs: A Simulation Study", VLSI Design, vol. 8, Article ID 029629, 6 pages, 1998. https://doi.org/10.1155/1998/29629

RF Performance of Si/SiGe MODFETs: A Simulation Study


The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both devices have equivalent structures corresponding to a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations to estimate the intrinsic noise figures, the RF figures of merit fT and fmax, and the effect of contact and gate resistances. Both devices exhibit velocity overshoot below the gate region. It is shown that the difference in noise figures and fT values can be mainly attributed to differences in device channel velocity, fmax exhibits a strong dependence on device contact resistance, eroding some of the performance advantage of the pseudomorphic HEMT.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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