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VLSI Design
Volume 8, Issue 1-4, Pages 93-98
http://dx.doi.org/10.1155/1998/39048

Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes

1Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany
2Electrical Engineering Department, Arizona State University, Tempe 85287-6206, AZ, USA
3Electrical Engineering Department, University of Rome, Tor Vergata, Rome 00133, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

G. Zandler, R. Oberhuber, D. Liebig, P. Vogl, M. Saraniti, and P. Lugli, “Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes,” VLSI Design, vol. 8, no. 1-4, pp. 93-98, 1998. https://doi.org/10.1155/1998/39048.