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Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan, "Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE", VLSI Design, vol. 8, Article ID 041638, 5 pages, 1998. https://doi.org/10.1155/1998/41638
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE
By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) , and using the full-band structure for both the electron and valence band of silicon , the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.
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