Computational ElectronicsView this Special Issue
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE
By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) , and using the full-band structure for both the electron and valence band of silicon , the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.