VLSI Design

VLSI Design / 1998 / Article
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Computational Electronics

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Volume 8 |Article ID 042893 | https://doi.org/10.1155/1998/42893

J.-F. Lin, D. Z.-Y. Ting, "Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices", VLSI Design, vol. 8, Article ID 042893, 5 pages, 1998. https://doi.org/10.1155/1998/42893

Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices


In recent years, artificially layered microstructure have been considered as candidates for better thermoelectrics. In this work we examine transport properties of the type-II broken-gap InAs/GaSb superlattice. We use the effective bond orbital model for an accurate description of the band structures. Theoretical results of thermoelectric transport coefficients and the dimensionless figure of merit for an (8, 8)-InAs/GaSb type-II superlattice are presented.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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