VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

View this Special Issue

Open Access

Volume 8 |Article ID 042893 | https://doi.org/10.1155/1998/42893

J.-F. Lin, D. Z.-Y. Ting, "Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices", VLSI Design, vol. 8, Article ID 042893, 5 pages, 1998. https://doi.org/10.1155/1998/42893

Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices

Abstract

In recent years, artificially layered microstructure have been considered as candidates for better thermoelectrics. In this work we examine transport properties of the type-II broken-gap InAs/GaSb superlattice. We use the effective bond orbital model for an accurate description of the band structures. Theoretical results of thermoelectric transport coefficients and the dimensionless figure of merit for an (8, 8)-InAs/GaSb type-II superlattice are presented.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views114
Downloads318
Citations

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.