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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 237-245

An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure

Naval Research Laboratory, Washington, D. C. 20375-5320, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We introduced a novel high-frequency source based on interband tunneling. A polarization-induced oscillation of trapped-hole-charge occurs in an AlGaSb/InAs/ AlGaSb resonant tunneling device. Rate equations for Zener tunneling, polarization, and electron-hole recombination is used to analyze the nonlinear dynamics of this device structure. The nonoscillatory state is unstable against the limit-cycle operation. The amplitude of trapped hole oscillation increases with bias, but the time-averaged values can be approximated by a step function. These lead to the hysteresis of the averaged trapped hole charge in AlGaSb barrier, and to the experimental intrinsic bistability in AlGaSb/InAs/AlGaSb resonant tunneling device. Large-scale time-dependent simulation of quantum transport with interband-tunneling dynamics is needed for the design optimization of this novel class of oscillator useful for high-bandwidth applications.