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VLSI Design
Volume 8, Issue 1-4, Pages 237-245
http://dx.doi.org/10.1155/1998/43956

An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure

Naval Research Laboratory, Washington, D. C. 20375-5320, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

F. A. Buot, “An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure,” VLSI Design, vol. 8, no. 1-4, pp. 237-245, 1998. https://doi.org/10.1155/1998/43956.