VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

View this Special Issue

Open Access

Volume 8 |Article ID 052301 | https://doi.org/10.1155/1998/52301

J. B. Roldán, F. Gámiz, J. A. López-Villanueva, "Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs", VLSI Design, vol. 8, Article ID 052301, 4 pages, 1998. https://doi.org/10.1155/1998/52301

Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs

Abstract

A new experimental method for determining the dependence of the electron mobility on the longitudinal-electric field has been developed. The development, validation and explanation of this new method has been carefully carried out. We have applied this procedure to standard submicron MOSFETs and after having obtained the mobility dependence on both the transverse- and longitudinal-electric fields we reproduced the experimental output curves. The saturation velocity has also been calculated using the mobility curves obtained by this new method.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views101
Downloads218
Citations

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.