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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 261-264
http://dx.doi.org/10.1155/1998/52301

Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs

Departamento de Electrónica y Tecnologĺa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n, 18071 Granada, Spain

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

J. B. Roldán, F. Gámiz, and J. A. López-Villanueva, “Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs,” VLSI Design, vol. 8, no. 1-4, pp. 261-264, 1998. doi:10.1155/1998/52301