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VLSI Design
Volume 8, Issue 1-4, Pages 1-11

Two-dimensional Carrier Transport in Si MOSFETs

Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235, Japan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Rona E. Belford, “Uniaxial, tensile-strained Si devices,” Journal of Electronic Materials, vol. 30, no. 7, pp. 807–811, 2001. View at Publisher · View at Google Scholar
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  • Takamitsu Ishihara, and Koichi Kato, “Theoretical prediction of universal curves for carrier transport in Si/SiO[sub 2](100) interfaces,” Journal of Applied Physics, vol. 114, no. 5, pp. 053713, 2013. View at Publisher · View at Google Scholar
  • K. L. Kovalenko, S. I. Kozlovskiy, and N. N. Sharan, “Quantum kinetics approach to calculation of the low field mobility in the hole inversion layers of silicon MOSFET’s,” Journal of Computational Electronics, 2018. View at Publisher · View at Google Scholar