VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

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Open Access

Volume 8 |Article ID 53546 | 5 pages | https://doi.org/10.1155/1998/53546

Monte Carlo Simulations of High Field Transport in Electroluminescent Devices

Abstract

High field transport in phosphor materials is an essential element of thin film electroluminescent device performance. Due to the high accelerating fields in these structures (1–3 MV/cm), a complete description of transport under high field conditions utilizing information on the full band structure of the material is critical to understand the light emission process due to impact excitation of luminescent impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based on empirical pseudopotential calculations to study its effect on the high field energy distribution of conduction band electrons.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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