Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 275-282
http://dx.doi.org/10.1155/1998/56862

Applicability of the High Field Model: A Preliminary Numerical Study

1politecnico di Milano, Milano 20133, Italy
2Courant Institute, New York University, New York, NY 10012, USA
3Department of Mathematics, Northwestern University, Evanston, IL 60208, USA
4Division of Applied Mathematics, Brown University, Providence, RI 02912, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Carlo Cercignani, Irene M. Gamba, Joseph W. Jerome, and Chai-Wang Shu, “A domain decomposition method for silicon devices,” Transport Theory and Statistical Physics, vol. 29, no. 3-5, pp. 525–536, 2000. View at Publisher · View at Google Scholar
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