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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 41-45
http://dx.doi.org/10.1155/1998/65181

High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

1lnstitut für Theoretische Elektrotechnik und Mikroelektronik, FB 1, Postfach 33 04 40, Universität Bremen, Bremen D-28334, Germany
2Institut für Integrierte Systeme, Gloridstrasse 35, Züirich CH-8092, Switzerland
3Intermetall, Hans-Bunte-Str. 19, Freiburg D-79108, Germany

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [8 citations]

The following is the list of published articles that have cited the current article.

  • P Vogl, R Oberhuber, and G Zandler, “Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET's,” Physical Review B, vol. 58, no. 15, pp. 9941–9948, 1998. View at Publisher · View at Google Scholar
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  • Jeremy R. Watling, and Douglas J. Paul, “A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system,” Journal of Applied Physics, vol. 110, no. 11, pp. 114508, 2011. View at Publisher · View at Google Scholar