Observation of Anomalous Negative Differential
Resistance in Diode Breakdown Simulation Using Carrier
Temperature Dependent Impact Ionization

Kan, Edwin C.; Jin, Gyoyoung; Yu, Zhiping; Dutton, Robert W.

doi:https://doi.org/10.1155/1998/76350

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Volume 6 |Article ID 076350 | https://doi.org/10.1155/1998/76350

Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, Robert W. Dutton, "Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization", VLSI Design, vol. 6, Article ID 076350, 4 pages, 1998. https://doi.org/10.1155/1998/76350

Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization

Edwin C. Kan,^1,2 Gyoyoung Jin,¹ Zhiping Yu,¹ and Robert W. Dutton¹

¹Center for Integrated Systems, Stanford University, Stanford, CA 94305-4055, USA

²404 Phillips Hall, School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA

Abstract

When carrier temperatures are used to model impact ionization with self-consistent cooling effects, anomalous negative differential resistance (NDR) was found in diode breakdown simulation. Possible mechanisms responsible for the NDR are analyzed.

Copyright

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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