VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 076350 | https://doi.org/10.1155/1998/76350

Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, Robert W. Dutton, "Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization", VLSI Design, vol. 6, Article ID 076350, 4 pages, 1998. https://doi.org/10.1155/1998/76350

Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization

Abstract

When carrier temperatures are used to model impact ionization with self-consistent cooling effects, anomalous negative differential resistance (NDR) was found in diode breakdown simulation. Possible mechanisms responsible for the NDR are analyzed.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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