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VLSI Design
Volume 6, Issue 1-4, Pages 299-302
http://dx.doi.org/10.1155/1998/76350

Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization

1Center for Integrated Systems, Stanford University, Stanford, CA 94305-4055, USA
2404 Phillips Hall, School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, and Robert W. Dutton, “Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization,” VLSI Design, vol. 6, no. 1-4, pp. 299-302, 1998. https://doi.org/10.1155/1998/76350.