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VLSI Design
Volume 8, Issue 1-4, Pages 99-103
http://dx.doi.org/10.1155/1998/85325

3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Scotland, Glasgow G12 8LT, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. R. Brown, A. Asenov, and J. R. Barker, “3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs,” VLSI Design, vol. 8, no. 1-4, pp. 99-103, 1998. https://doi.org/10.1155/1998/85325.