Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 231-235

Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO2 Quantum Dot

1Swiss Federal Institute of Technology, Integrated Systems Laboratory, Gloriastrasse 35, Zürich CH-8092, Switzerland
2Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana 61801, Illinois, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • M G Peters, J I Dijkhuis, and L W Molenkamp, “Zero-dimensional states in a quantum dot, formed at threshold in a disordered submicron silicon transistor,” Semiconductor Science and Technology, vol. 14, no. 12, pp. 1119–1123, 1999. View at Publisher · View at Google Scholar
  • A. Trellakis, and U. Ravaioli, “Three-dimensional spectral solution of the Schrödinger equation for arbitrary band structures,” Journal of Applied Physics, vol. 92, no. 7, pp. 3711, 2002. View at Publisher · View at Google Scholar