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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 111-115

Cellular Automata Studies of Vertical Silicon Devices

1Electrical Engineering Department, Arizona State University, Tempe, (AZ) 85287-6206, USA
2Physik Department and Walter Schottky Institut, TU-M√ľnchen, Garching, Germany

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We present systematic theoretical Cellular Automata (CA) studies of a novel nanometer scale Si device, namely vertically grown Metal Oxide Field Effect Transistors (MOSFET) with channel lengths between 65 and 120 nm. The CA simulations predict drain characteristics and output conductance as a function of gate length. The excellent agreement with available experimental data indicates a high quality oxide/semiconductor interface. Impact ionization is shown to be of minor importance. For inhomogeneous p-doping profiles along the channel, significantly improved drain current saturation is predicted.