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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 257-260

A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization

Departamento de Electrónica y Tecnologĺa de Computadores, Universidad de Granada, Facultad de Cieneias, Avd. Fuentenueva s/n, 18071 Granada, Spain

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.