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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 393-399

Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model

1P.O. Box 15600, Department of Electrical Engineering, Northern Arizona University, Flagstaff 86011-5600, AZ, USA
2Department of Electrical Engineering, University of Kentucky, 453 Anderson Hall, Lexington 40506-0046, KY, USA
3Department of Mechanical Engineering, University of Kentucky, 514h Ctr for Robotics and Mfg Systems, Lexington 40506-0108, KY, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new numerical method for semiconductor device simulation is presented. The additive decomposition method has been successfully applied to Burgers' and Navier-Stokes equations governing turbulent fluid flow by decomposing the equations into large-scale and small-scale parts without averaging. The additive decomposition (AD) technique is well suited to problems with a large range of time and/or space scales, for example, thermal-electrical simulation of power semiconductor devices with large physical size. Furthermore, AD adds a level of parallelization for improved computational efficiency. The new numerical technique has been tested on the 1-D drift-diffusion model of a p-i-n diode for reverse and forward biases. Distributions of φ, n and p have been calculated using the AD method on a coarse large-scale grid and then in parallel small-scale grid sections. The AD results agreed well with the results obtained with a traditional one-grid approach, while potentially reducing memory requirements with the new method.