Table of Contents
VLSI Design
Volume 10, Issue 4, Pages 467-483
http://dx.doi.org/10.1155/2000/52147

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices

Dipartimento di Elettronica, Informatica e Sistemistica (DEIS) of the University of Bologna, viale Risorgimento 2, Bologna 40136, Italy

Received 16 December 1998; Accepted 14 December 1999

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Susanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, and Giorgio Baccarani, “An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices,” VLSI Design, vol. 10, no. 4, pp. 467-483, 2000. https://doi.org/10.1155/2000/52147.