Table of Contents Author Guidelines Submit a Manuscript
VLSI Design
Volume 10, Issue 4, Pages 335-354
http://dx.doi.org/10.1155/2000/82945

Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon

1Dipartimento di Matematica, Universita' di Catania, Viale Andrea Doria 6, Catania 95125, Italy
2Dipartimento Interuniversitario di Matematica, Politecnico di Bari, Via E. Orabona 4, Bari 70125, Italy

Received 16 December 1998; Accepted 14 December 1999

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. M. Anile, O. Muscato, and V. Romano, “Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon,” VLSI Design, vol. 10, no. 4, pp. 335-354, 2000. https://doi.org/10.1155/2000/82945.