Table of Contents
VLSI Design
Volume 2009, Article ID 803974, 9 pages
Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

1Department of Electrical and Computer Engineering, Shahid Beheshti University, 14966-47535 Tehran, Iran
2Science and Research Branch, Islamic Azad University, 14966-47535 Tehran, Iran

Received 20 November 2008; Revised 29 April 2009; Accepted 3 June 2009

Academic Editor: Ayman Fayed

Copyright © 2009 Mohammad Javad Sharifi and Davoud Bahrepour. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Tran, Virazel, Bosio, Dilillo, Girard, Pravossoudovitch, and Wunderlich, “A hybrid fault tolerant architecture for robustness improvement of digital circuits,” Proceedings of the Asian Test Symposium, pp. 136–141, 2011. View at Publisher · View at Google Scholar
  • Mohammad J. Sharifi, and Davoud Bahrepour, “A Multiloop and Full Amplitude Hysteresis Model for Molecular Electronics,” Ieee Transactions On Computer-Aided Design Of Integrated Circuits And Systems, vol. 35, no. 2, pp. 187–196, 2016. View at Publisher · View at Google Scholar