VLSI Design

VLSI Design / 2011 / Article / Fig 10

Research Article

Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

Figure 10

Simulated current-voltage characteristic of VG RF SOI NLIGBT at 𝑉 g s = 0 . 4  V.
548546.fig.0010a
(a) Simulated current-voltage characteristic at 𝑉 g s = 0 . 4  V
548546.fig.0010b
(b) Amplified current-voltage characteristic in green rectangle region