Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

<div class="floats-full-page floats-full-page-figure"><h2>Figure 9</h2><div class="floats-full-page-caption"><table>Independent 2D coordinates for dual trapezoid approximation of pinched P<sup>+</sup> source region.</table></div><div class="floats-full-page-content"><table class="table-group" width="800px"><tr class="fig-image"><td><img alt="548546.fig.009" src="https://static-01.hindawi.com/articles/vlsi/volume-2011/548546/figures/548546.fig.009.jpg" /></td></tr></table></div></div>

Figure 9 | Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

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Figure 9: Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

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Figure 9

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Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

Figure 9