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Wireless Communications and Mobile Computing
Volume 2018, Article ID 8234615, 6 pages
Research Article

A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

National Mobile Communication Research Laboratory, School of Information Science and Engineering, Southeast University, Nanjing 211189, China

Correspondence should be addressed to Dixian Zhao; nc.ude.ues@oahz.naixid

Received 21 October 2017; Revised 27 January 2018; Accepted 27 February 2018; Published 29 March 2018

Academic Editor: Enrico M. Vitucci

Copyright © 2018 Dixian Zhao and Yongran Yi. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.