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Wireless Communications and Mobile Computing
Volume 2018 (2018), Article ID 8234615, 6 pages
https://doi.org/10.1155/2018/8234615
Research Article

A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

National Mobile Communication Research Laboratory, School of Information Science and Engineering, Southeast University, Nanjing 211189, China

Correspondence should be addressed to Dixian Zhao; nc.ude.ues@oahz.naixid

Received 21 October 2017; Revised 27 January 2018; Accepted 27 February 2018; Published 29 March 2018

Academic Editor: Enrico M. Vitucci

Copyright © 2018 Dixian Zhao and Yongran Yi. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Dixian Zhao and Yongran Yi, “A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology,” Wireless Communications and Mobile Computing, vol. 2018, Article ID 8234615, 6 pages, 2018. doi:10.1155/2018/8234615