A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

Table 1

Performance summary and comparison.

	Technology	(V)	Frequency (GHz)	Gain (dB)	(dBm)	(%)
This work	100 nm GaAs	3.0	74	20.8	26.5	17.9
[8]	100 nm GaAs	4.0	83	15.0/18.7^1	28.5/26.5^1	N/A/15.0^1
[9]	100 nm GaAs	3.5	81	25.0	20.0^2	N/A
[10]	100 nm GaAs	4.0	76	15.0	23.0^2	8.0^2
[7]	140 nm GaN	14.0	93.5	16.3	33.3	19.0
[13]	250 nm InP	2.5	76	15.5	26.4	26.9
[14]	250 nm InP	2.5	81	22.0	21.1	40.0
[6]	90 nm SiGe	1.8	76	19.3	25.0^3	9.0^3
[15]	130 nm SiGe	2.5	84	27.0	18.0^2	9.0^2
[2]	40 nm CMOS	0.9	78	18.1	20.3	22.3
[4]	40 nm CMOS	1.8	73	25.3	21.5	16.5
[5]	65 nm CMOS	1.0	79	24.2	19.0	18.5

and . ² and . ³Graphically estimated.