| First author, reference | Year | CMOS process | Frequency band | Supply voltage, V | Modulation | Data rate | Overall power consumption (TX/RX), mW | Energy/bit | RX Sensitivity | Chip area, mm2 | BER | Input impedance | # of coexistence | Standard compatibility | Extra feature |
| Tsai, [109] | 2012 | 90-nm | 15–25 MHz | 1/0.5 | 16-QAM OFDM | 29.1 Mb/s | TX: 1.925 | 0.07 nJ/b | | | | | | No | Electrode connection quality detection | Tsai, [110] | 2015 | 90-nm | 35–45 MHz | 0.53 | 16-QAM OFDM | 29.1 Mb/s | RX: 6.349 | 0.22 nJ/b | | 5.2 | | | | No | Electrode connection quality detection, autogain control | Tseng, [111] | 2016 | 0.18- | | 0.5 | Manchester coding | 10 Mb/s | 22 μW | | | 0.525 | | | | No | | Lee, [112] | 2014 | 65-nm | 40–120 MHz | 1.1 | Three level Walsh coding | 60 Mb/s | TX: 1.85, RX: 9.02 | TX: 31 pJ/b, RX: 150 pJ/b | 58 dBm @ BER | TX: 0.072, RX: 1.05 | | | | No | | Wang, [113] | 2015 | 0.18- | 2.5 MHz | 1.8 | OOK | 2.5 Mb/s | 5.4 | | −37 dBm | 0.706 | | | | No | | Tsou, [114] | 2015 | 0.18- | 18.375–23.625 MHz | 1.2 | FSDT | 164 kb/s–2.625 Mb/s | 1.74 | 0.66 nJ/b | −90 dBm standalone, −65 dBm through body | 1.05 | | | | Yes | | Saadeh, [115] | 2015 | 65-nm | 20–120 MHz | | H-OFDM + AFH FSK | 1 Mb/s | 1.54 | 1.5 nJ/b | | 2.28 | | | | No | Multipath mitigation | Saadeh [116] | 2017 | 65-nm | 20–120 MHz | 1.1 | 64 P-OFDM, 16 QAM | 1 Mb/s | 1.4 | 1.4 nJ/b | −78 dBm | 2.13 | | | | No | Multipath mitigation | Saadeh [117, 118] | 2016 | 65-nm | 20–120 MHz | 1.1 | 8 P-OFDM, BPSK | 200 kb/s–2 Mb/s | 1.1 | 0.55 nJ/b | −83.1 dBm | 0.542 | @ 2 Mb/s, @ 200 kb/s | | | No | Multipath mitigation, ground effect mitigation, skin-electrode variance tolerance | Chung, [119] | 2015 | 90-nm | 1–80 MHz | 1 | Wideband signaling | 1–40 Mb/s | 1.94 | 0.0485 nJ/b | −36 dBm | | @ 40 Mb/s | | | No | | Chung, [120] | 2016 | 90-nm | 1–40 MHz | 1 | Wideband signaling | 1–40 Mb/s | 1.21 (w/o AFE) | 0.03 nJ/b | −29 dBm | 0.14 | @ 40 Mb/s | | | No | | Chung, [121] | 2017 | 90-nm | | 1 | Wideband signaling | 1–20 Mb/s | 5.5 (w/o AFE) | 0.275 nJ/b | 18.87 dBm | 0.4 | @ 20 Mb/s | | | No | | Lin, [122] | 2017 | 0.13- | 1–100 MHz | 1.2 | Wideband signaling | 5 Mb/s | 0.82 | | 9.6 mW | 0.26 | | | | | |
|
|