Review Article

Past Results, Present Trends, and Future Challenges in Intrabody Communication

Table 8

Comparison of intrabody communication transceivers developed in CMOS technology (II).

First author, reference Year CMOS process Frequency band Supply voltage, V Modulation Data rate Overall power consumption (TX/RX), mW Energy/bit RX Sensitivity Chip area, mm2 BER Input impedance # of coexistence Standard compatibility Extra feature

Tsai, [109] 2012 90-nm 15–25 MHz 1/0.5 16-QAM OFDM 29.1 Mb/s TX: 1.925 0.07 nJ/b No Electrode connection quality detection
Tsai, [110] 2015 90-nm 35–45 MHz 0.53 16-QAM OFDM 29.1 Mb/s RX: 6.349 0.22 nJ/b 5.2 No Electrode connection quality detection, autogain control
Tseng, [111] 2016 0.18- 0.5 Manchester coding 10 Mb/s 22 μW 0.525 No
Lee, [112] 2014 65-nm 40–120 MHz 1.1 Three level Walsh coding 60 Mb/s TX: 1.85, RX: 9.02 TX: 31 pJ/b, RX: 150 pJ/b 58 dBm @ BER TX: 0.072, RX: 1.05 No
Wang, [113] 2015 0.18- 2.5 MHz 1.8 OOK 2.5 Mb/s 5.4 −37 dBm 0.706 No
Tsou, [114] 2015 0.18- 18.375–23.625 MHz 1.2 FSDT 164 kb/s–2.625 Mb/s 1.74 0.66 nJ/b −90 dBm standalone, −65 dBm through body 1.05 Yes
Saadeh, [115] 2015 65-nm 20–120 MHz H-OFDM + AFH FSK 1 Mb/s 1.54 1.5 nJ/b 2.28 No Multipath mitigation
Saadeh [116] 2017 65-nm 20–120 MHz 1.1 64 P-OFDM, 16 QAM 1 Mb/s 1.4 1.4 nJ/b −78 dBm 2.13 No Multipath mitigation
Saadeh [117, 118] 2016 65-nm 20–120 MHz 1.1 8 P-OFDM, BPSK 200 kb/s–2 Mb/s 1.1 0.55 nJ/b −83.1 dBm 0.542 @ 2 Mb/s, @ 200 kb/s No Multipath mitigation, ground effect mitigation, skin-electrode variance tolerance
Chung, [119] 2015 90-nm 1–80 MHz 1 Wideband signaling1–40 Mb/s 1.940.0485 nJ/b −36 dBm @ 40 Mb/s No
Chung, [120] 2016 90-nm 1–40 MHz 1 Wideband signaling 1–40 Mb/s 1.21 (w/o AFE) 0.03 nJ/b −29 dBm 0.14 @ 40 Mb/s No
Chung, [121] 2017 90-nm 1 Wideband signaling 1–20 Mb/s 5.5 (w/o AFE) 0.275 nJ/b 18.87 dBm 0.4 @ 20 Mb/s No
Lin, [122] 2017 0.13- 1–100 MHz 1.2 Wideband signaling 5 Mb/s 0.82 9.6 mW 0.26